SMA661AS 内嵌匹配网格和关断功能，因此不需要外置开关。 SMA661AS 采用超小型 SOT666 塑料封装，只需一个外接电容，从而最大限度减少 PCB 占用面积。 本器件基于 ST 高性能 RF SiGe 70 GHz 技术。
主要特点：
■高增益 (17 dB)
■关断功能
■高线性 (high IIP2/3)
■低噪声 (1.4 dB)
■采用 70 GHz SiGe 技术
■温度补偿
■无条件稳定
■SOT666 1.65 x 1.2 x 0.57 mm 超小型封装

SMA661AS
Description
The SMA661AS is the first low-noise amplifier with integrated matching networks and embedded power-down function. The chip, which requires only one external input capacitor, drastically reduces the application bill of materials and the PCB area, resulting in an ideal solution for compact and cost-effective GPS LNA.
The SMA661AS, using the ST's leading-edge 70 GHz SiGe BiCMOS technology, achieves excellent RF performance at the GPS frequency of 1.575 GHz, in terms of power gain, noise Figure and linearity with a current consumption of 8.5 mA.
The device is unconditionally stable and ESD protected. All these features are steady over the operating temperature range of -40 oC to +85 oC.
It's housed in ultra-miniature SOT666 plastic package.
Key Features
Power down function
Integrated matching networks
Low noise figure 1.15 dB @ 1.575 GHz
High gain 18 dB @ 1.575 GHz
High linearity (IIP3 = +3 dBm)
Temperature compensated
Unconditionally stable
ESD protection (HBM ± 2 kV)
70 GHz Silicon Germanium technology